IGBT module
IGBTs can be found as discrete components but are more commonly used in modules that allow higher power density, better reliability and simpler wiring. IGBT modules are also more cost effective and provide improved heat dissipation compared to using traditional power transistors.
An IGBT module is a fusion between a bipolar power transistor and a MOSFET. It combines the simple gate drive characteristics of the MOSFET and the high current and low saturation voltage capability of the bipolar transistor in a single device. The IGBT acts as a switch (when it receives a signal to its gate, the device turns on and when the signal is removed the device switches off).
The IGBT has three terminals, an Emitter, Collector and Gate. The Emitter and Collector are the conduction terminals, the Gate is the control terminal that is used to switch the device on and off.
How does an IGBT module differ from a traditional power transistor?
In order to operate the IGBT it requires a voltage source VCC connected across the Collector and Emitter. The IGBT will be turned on when the gate voltage VGE is applied. Then a current will flow from the gate through the junction J1 to the Junction J2 in the device. The current will turn off the device when the VGE is no longer applied.
The non-latch-up behaviour of IGBTs is a result of a parasitic thyristor action between the two devices. It is important to suppress this action to avoid unwanted switching behaviour. During the early stages of IGBT development, researchers tried to increase the device saturation current to suppress this behaviour but they failed. However, they succeeded in suppressing this parasitic thyristor action when the maximal collector current was limited below the latch-up threshold. This was a major breakthrough in IGBT design and made it possible to use the IGBT as a switch.
Another important feature of the IGBT is its fast switching. This is a result of the fact that the IGBT has a very short switching time and high switching frequency. This allows the IGBT to be used in high-speed switching applications such as AC inverters and motor drives. An IGBT is also protected against damage from reverse voltage by a body diode. Although this is not visible in the cross-sectional image above, it is present and is located between the IGBTs.
An IGBT module has a heat dissipation substrate that is made of copper. This allows the IGBTs to conduct large amounts of current at a low temperature, making it suitable for high-power applications such as electric vehicles and inverters. The substrate has a thermal resistance of approximately 1W/cm2 and is designed to quickly dissipate the generated heat by removing it through the air gap. Various cooling methods can be used including air or water-cooled systems. To further improve the thermal performance of an IGBT module, some manufacturers add a layer of n+ buffer material to the upper surface of the IGBT. This is known as a drift layer and increases the turn-on voltage and improves the thermal cycling capability of the IGBT.
Jinftry (JING FU CAI (HONGKONG) INTERNATIONAL CO., LIMITED) is a global professional one-stop procurement and service provider of electronic components. It uses independent distribution, platform distribution combined with the Internet online sales model to sell various products worldwide. Types of electronic components, providing one-stop component procurement and supply chain services to global OEM factory customers and brokers. Sales include integrated circuits, discrete semiconductors, IGBT modules, connectors, capacitors, diodes, transistors and other electronic components, covering power supply, automotive, communications, computers, consumer products, medical, industrial, mobile phone and other application fields.
Jinftry product line cards: TI, ONSEMI, Microchip, Maxim, NXP, STM, Xilinx, Intel, Infineon, Broadcom, Renesas, samtec, Souriau, CISSOID, Mitsubishi, FUJI, Semikron, etc.
Website: https://www.jinftry.com
Shenzhen Operation Center Address: 26F1, Building C, Electronic Technology Building, Shennan Middle Road, Futian District, Shenzhen, Guangdong, China
Hong Kong company name: JING FU CAI (HONGKONG) INTERNATIONAL CO., LIMITED
Registered address of Hong Kong company: Unit No.A222,3F,Hang Fung Industrial Building,Phase2,No.2G Hok Yuen Street,Hunghom,Kowloon,Hong Kong
Email: [email protected]
Tel: +86-755-82518276
